NTD4857N-1G Todos los transistores

 ..1. Size:271K  onsemi
 ntd4857n-1g ntd4857n.pdf

NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 5.7 m @10V 25 V 78 A Applications 8.0 m @4.5 V VCORE Ap

 8.1. Size:143K  onsemi
 ntd4858n.pdf

NTD4858N MOSFET Power, Single, N-Channel, DPAK/IPAK 25 V, 73 A Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses 6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses 25 V 73 A These are Pb-Free Devices 9.3 mW @ 4.5 V Applications D VC

 8.2. Size:300K  onsemi
 ntd4858n-1g ntd4858n.pdf

NTD4858N Power MOSFET 25 V, 73 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 6.2 m @10V 25 V 73 A Applications 9.3 m @4.5 V VCORE Ap

 8.3. Size:155K  onsemi
 ntd4856n-1g.pdf

NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 4.7 mW @ 10 V Unique Site

 8.4. Size:262K  onsemi
 ntd4855n-1g ntd4855n-d.pdf

NTD4855N Power MOSFET 25 V, 98 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 4.3 m @10V 25 V 98 A Applications 6.0 m @4.5 V VCORE Ap

 8.5. Size:296K  onsemi
 ntd4856n.pdf

NTD4856N Power MOSFET 25 V, 89 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 4.7 m @10V 25 V 89 A Applications 6.8 m @4.5 V VCORE Ap

 8.6. Size:296K  onsemi
 ntd4854n-1g.pdf

NTD4854N Power MOSFET 25 V, 128 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 3.6 m @10V 25 V 128 A Applications 4.7 m @4.5 V VCORE