NTD4857N-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4857N-1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 56.6 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 78 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 20.6 nS
Conductancia de drenaje-sustrato (Cd): 495 pF
Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
Paquete / Cubierta: DPAK IPAK
Búsqueda de reemplazo de MOSFET NTD4857N-1G
NTD4857N-1G Datasheet (PDF)
ntd4857n-1g ntd4857n.pdf
NTD4857NPower MOSFET25 V, 78 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices5.7 m @10V25 V78 AApplications8.0 m @4.5 V VCORE Ap
ntd4858n.pdf
NTD4858NMOSFET Power, Single,N-Channel, DPAK/IPAK25 V, 73 AFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses25 V73 A These are Pb-Free Devices 9.3 mW @ 4.5 VApplications D VC
ntd4858n-1g ntd4858n.pdf
NTD4858NPower MOSFET25 V, 73 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices6.2 m @10V25 V73 AApplications9.3 m @4.5 V VCORE Ap
ntd4856n-1g.pdf
NTD4856N, NVD4856NPower MOSFET25 V, 89 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring4.7 mW @ 10 VUnique Site
ntd4855n-1g ntd4855n-d.pdf
NTD4855NPower MOSFET25 V, 98 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.3 m @10V25 V98 AApplications6.0 m @4.5 V VCORE Ap
ntd4856n.pdf
NTD4856NPower MOSFET25 V, 89 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.7 m @10V25 V89 AApplications6.8 m @4.5 V VCORE Ap
ntd4854n-1g.pdf
NTD4854NPower MOSFET25 V, 128 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices3.6 m @10V25 V128 AApplications4.7 m @4.5 V VCORE
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