All MOSFET. NTD4857N-1G Datasheet

 

NTD4857N-1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD4857N-1G
   Marking Code: 4857N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 78 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 20.6 nS
   Cossⓘ - Output Capacitance: 495 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: DPAK IPAK

 NTD4857N-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD4857N-1G Datasheet (PDF)

 ..1. Size:271K  onsemi
 ntd4857n-1g ntd4857n.pdf

NTD4857N-1G NTD4857N-1G

NTD4857NPower MOSFET25 V, 78 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices5.7 m @10V25 V78 AApplications8.0 m @4.5 V VCORE Ap

 8.1. Size:143K  onsemi
 ntd4858n.pdf

NTD4857N-1G NTD4857N-1G

NTD4858NMOSFET Power, Single,N-Channel, DPAK/IPAK25 V, 73 AFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses25 V73 A These are Pb-Free Devices 9.3 mW @ 4.5 VApplications D VC

 8.2. Size:300K  onsemi
 ntd4858n-1g ntd4858n.pdf

NTD4857N-1G NTD4857N-1G

NTD4858NPower MOSFET25 V, 73 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices6.2 m @10V25 V73 AApplications9.3 m @4.5 V VCORE Ap

 8.3. Size:155K  onsemi
 ntd4856n-1g.pdf

NTD4857N-1G NTD4857N-1G

NTD4856N, NVD4856NPower MOSFET25 V, 89 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring4.7 mW @ 10 VUnique Site

 8.4. Size:262K  onsemi
 ntd4855n-1g ntd4855n-d.pdf

NTD4857N-1G NTD4857N-1G

NTD4855NPower MOSFET25 V, 98 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.3 m @10V25 V98 AApplications6.0 m @4.5 V VCORE Ap

 8.5. Size:296K  onsemi
 ntd4856n.pdf

NTD4857N-1G NTD4857N-1G

NTD4856NPower MOSFET25 V, 89 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices4.7 m @10V25 V89 AApplications6.8 m @4.5 V VCORE Ap

 8.6. Size:296K  onsemi
 ntd4854n-1g.pdf

NTD4857N-1G NTD4857N-1G

NTD4854NPower MOSFET25 V, 128 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices3.6 m @10V25 V128 AApplications4.7 m @4.5 V VCORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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