NTD4910N-1G Todos los transistores

 

NTD4910N-1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4910N-1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21.8 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: DPAK IPAK

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NTD4910N-1G datasheet

 ..1. Size:138K  onsemi
ntd4910n-1g.pdf pdf_icon

NTD4910N-1G

NTD4910N Power MOSFET 30 V, 37 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 37 A 13 mW @ 4.5 V DC-DC Conv

 6.1. Size:108K  onsemi
ntd4910n.pdf pdf_icon

NTD4910N-1G

NTD4910N Power MOSFET 30 V, 37 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 37 A 13 mW @ 4.5 V DC-DC Conv

 8.1. Size:140K  onsemi
ntd4913n.pdf pdf_icon

NTD4910N-1G

NTD4913N Power MOSFET 30 V, 32 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 10.5 mW @ 10 V CPU Power Delivery 30 V 32 A 15 mW @ 4.5 V DC-DC Con

 9.1. Size:123K  1
ntd4963ng.pdf pdf_icon

NTD4910N-1G

NTD4963N Power MOSFET 30 V, 44 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.6

Otros transistores... NTD4856N-1G , NTD4857N-1G , NTD4858N-1G , NTD4860N-1G , NTD4863N-1G , NTD4865N-1G , NTD4904N-1G , NTD4909N-1G , RFP50N06 , NTD4960N-1G , NTD4963N-1G , NTD4965N-1G , NTD4969N-1G , NTD4970N-1G , NTD50N03R , NTD5406NG , NTD5407NG .

History: SUM110P08-11 | MDF4N60TP | MDF4N65BTH

 

 

 


History: SUM110P08-11 | MDF4N60TP | MDF4N65BTH

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