NTD5406NG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD5406NG 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 57 nS
Cossⓘ - Capacitancia de salida: 370 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: DPAK
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NTD5406NG datasheet
ntd5406ng std5406nt4g.pdf
NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 8.7 m @ 10 V 70 A Applications Electronic Brake Systems Electronic Power Steering N-
ntd5406n.pdf
NTD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) TYP (Note 1) Applications 40 V 8.7 m @ 10 V 70 A Electronic Brake Systems Electronic Power Steering Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25 C unless
ntd5407ng std5407nt4g.pdf
NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 21 mW @ 10 V 38 A Applications Electronic Brake Systems Electronic Power Steering N-Ch
ntd5407n.pdf
NTD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) TYP (Note 1) Applications 40 V 21 mW @ 10 V 38 A Electronic Brake Systems Electronic Power Steering Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25 C unless ot
Otros transistores... NTD4909N-1G, NTD4910N-1G, NTD4960N-1G, NTD4963N-1G, NTD4965N-1G, NTD4969N-1G, NTD4970N-1G, NTD50N03R, HY1906P, NTD5407NG, NTD5413NT4G, NTD5414NT4G, NTD5802NT4G, NTD5804NT4G, NTD5805NT4G, NTD5806NT4G, NTD5807NT4G
Parámetros del MOSFET. Cómo se afectan entre sí.
History: JMSH1507PS | AGM056N10A | STE180N10 | SDF18N50 | DHF90N045R | QM2410V | APT904RAN
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