NTF2955T1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTF2955T1G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 14.3 nC
   trⓘ - Tiempo de subida: 7.6 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET NTF2955T1G

NTF2955T1G Datasheet (PDF)

..1. Size:131K onsemi
ntf2955pt1g ntf2955t1g.pdf

NTF2955, NVF2955,NVF2955PPower MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features TMOS7 Design for low RDS(on) http://onsemi.com Withstands High Energy in Avalanche and Commutation ModesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NVF2955, NVF2955P-60 V 145 mW @ -10 V -2.6 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplications Pow

..2. Size:818K cn vbsemi
ntf2955t1g.pdf

NTF2955T1Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Param

7.1. Size:110K onsemi
ntf2955 nvf2955 nvf2955p.pdf

NTF2955, NVF2955,NVF2955PPower MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features Design for low RDS(on) http://onsemi.com Withstands High Energy in Avalanche and Commutation ModesV(BR)DSS RDS(on) TYP ID MAX AEC-Q101 Qualified - NVF2955, NVF2955P-60 V 145 mW @ -10 V -2.6 A These Devices are Pb-Free and are RoHS CompliantApplications P-Channel Power Supp

7.2. Size:112K onsemi
ntf2955 nvf2955.pdf

NTF2955, NVF2955Power MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com AEC-Q101 Qualified - NVF2955 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAX-60 V 145 mW @ -10 V -2.6 AApplications Power SuppliesP-Channel PWM Motor

7.3. Size:110K onsemi
ntf2955-p.pdf

NTF2955, NTF2955PPower MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features TMOS7 Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Pb-Free Packages are AvailableApplicationsV(BR)DSS RDS(on) TYP ID MAX Power Supplies-60 V 145 mW @ -10 V -2.6 A PWM Motor ControlP-Channel ConvertersD Power Manage

7.4. Size:819K cn vbsemi
ntf2955pt1g.pdf

NTF2955PT1Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Para

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