NTF6P02T3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTF6P02T3G, NVF6P02T3GPower MOSFET-10 Amps, -20 VoltsP-Channel SOT-223http://onsemi.comFeatures Low RDS(on)-10 AMPERES Logic Level Gate Drive-20 VOLTS Diode Exhibits High Speed, Soft RecoveryRDS(on) = 44 mW (Typ.) Avalanche Energy Specified AEC Q101 Qualified and PPAP Capable - NVF6P02T3GS NVF Prefix for Automotive and Other Applications Requiring

NTF6P02T3Gwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Loa

NTF6P02T3Power MOSFET-10 Amps, -20 VoltsP-Channel SOT-223http://onsemi.comFeatures Low RDS(on)-10 AMPERES Logic Level Gate Drive-20 VOLTS Diode Exhibits High Speed, Soft RecoveryRDS(on) = 44 mW (Typ.) Avalanche Energy Specified Pb-Free Package is Available STypical ApplicationsG Power Management in Portables and Battery-Powered Products, i.e.:

NTF6P02, NVF6P02MOSFET Power,P-Channel, SOT-223-10 A, -20 VFeatureswww.onsemi.com Low RDS(on)-10 AMPERES Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery -20 VOLTS Avalanche Energy SpecifiedRDS(on) = 44 mW (Typ.) NVF Prefix for Automotive and Other Applications RequiringSUnique Site and Control Change Requirements; AEC-Q101Qualifie