All MOSFET. NTF6P02T3G Datasheet

 

NTF6P02T3G MOSFET. Datasheet pdf. Equivalent

Type Designator: NTF6P02T3G

Marking Code: 6P02

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 8.3 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: SOT-223

NTF6P02T3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTF6P02T3G Datasheet (PDF)

1.1. ntf6p02t3g.pdf Size:107K _update-mosfet

NTF6P02T3G
NTF6P02T3G

NTF6P02T3G, NVF6P02T3G Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http://onsemi.com Features • Low RDS(on) -10 AMPERES • Logic Level Gate Drive -20 VOLTS • Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) • Avalanche Energy Specified • AEC Q101 Qualified and PPAP Capable - NVF6P02T3G S • NVF Prefix for Automotive and Other Applications Requiring

1.2. ntf6p02t3.pdf Size:138K _onsemi

NTF6P02T3G
NTF6P02T3G

NTF6P02T3 Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 http://onsemi.com Features Low RDS(on) -10 AMPERES Logic Level Gate Drive -20 VOLTS Diode Exhibits High Speed, Soft Recovery RDS(on) = 44 mW (Typ.) Avalanche Energy Specified Pb-Free Package is Available S Typical Applications G Power Management in Portables and Battery-Powered Products, i.e.: Cellular and C

 

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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