All MOSFET. NTF6P02T3G Datasheet

 

NTF6P02T3G Datasheet and Replacement


   Type Designator: NTF6P02T3G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 8.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-223
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NTF6P02T3G Datasheet (PDF)

 ..1. Size:107K  onsemi
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NTF6P02T3G

NTF6P02T3G, NVF6P02T3GPower MOSFET-10 Amps, -20 VoltsP-Channel SOT-223http://onsemi.comFeatures Low RDS(on)-10 AMPERES Logic Level Gate Drive-20 VOLTS Diode Exhibits High Speed, Soft RecoveryRDS(on) = 44 mW (Typ.) Avalanche Energy Specified AEC Q101 Qualified and PPAP Capable - NVF6P02T3GS NVF Prefix for Automotive and Other Applications Requiring

 ..2. Size:849K  cn vbsemi
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NTF6P02T3G

NTF6P02T3Gwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Loa

 5.1. Size:138K  onsemi
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NTF6P02T3G

NTF6P02T3Power MOSFET-10 Amps, -20 VoltsP-Channel SOT-223http://onsemi.comFeatures Low RDS(on)-10 AMPERES Logic Level Gate Drive-20 VOLTS Diode Exhibits High Speed, Soft RecoveryRDS(on) = 44 mW (Typ.) Avalanche Energy Specified Pb-Free Package is Available STypical ApplicationsG Power Management in Portables and Battery-Powered Products, i.e.:

 7.1. Size:206K  onsemi
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NTF6P02T3G

NTF6P02, NVF6P02MOSFET Power,P-Channel, SOT-223-10 A, -20 VFeatureswww.onsemi.com Low RDS(on)-10 AMPERES Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery -20 VOLTS Avalanche Energy SpecifiedRDS(on) = 44 mW (Typ.) NVF Prefix for Automotive and Other Applications RequiringSUnique Site and Control Change Requirements; AEC-Q101Qualifie

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - NTF6P02T3G MOSFET datasheet

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