NTGD3148NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTGD3148NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11.2 nS
   Cossⓘ - Capacitancia de salida: 73 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TSOP6

Búsqueda de reemplazo de MOSFET NTGD3148NT1G

NTGD3148NT1G Datasheet (PDF)

..1. Size:76K onsemi
ntgd3148n-d ntgd3148nt1g.pdf

NTGD3148NPower MOSFET20 V, 3.5 A, Dual N-Channel, TSOP-6Features Low Threshold Levels, VGS(th)

..2. Size:1766K cn vbsemi
ntgd3148nt1g.pdf

NTGD3148NT1Gwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6

7.1. Size:120K onsemi
ntgd3149c.pdf

NTGD3149CPower MOSFETComplementary, 20 V, +3.5/-2.7 A,TSOP-6 DualFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On ResistanceV(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response60 mW @ 4.5 VN-Ch Independently Connecte

7.2. Size:109K onsemi
ntgd3147f ntgd3147ft1g.pdf

NTGD3147FPower MOSFET andSchottky Diode-20 V, -2.5 A, P-Channel with SchottkyBarrier Diode, TSOP-6Featureshttp://onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate ChangeV(BR)DSS RDS(on) MaxID Max Low RDS(on)145 mW @ -4.5 V -2.2 A Low VF Schottky Diode-20 V Independently Connected Devices to Provide Design Flexibility200 mW @ -2.5 V -1.6 A

8.1. Size:105K onsemi
ntgd3133p.pdf

NTGD3133PPower MOSFET-20 V, -2.5 A, P-Channel, TSOP-6 DualFeatures Reduced Gate Charge for Fast Switching -2.5 V Gate Ratinghttp://onsemi.com Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design FlexibilityV(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device145 mW @ -4.5 V -2.2 A-20 VApplications200 mW @ -2.5 V -1.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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