NTGD3148NT1G Datasheet and Replacement

NTGD3148NPower MOSFET20 V, 3.5 A, Dual N-Channel, TSOP-6Features Low Threshold Levels, VGS(th)

NTGD3148NT1Gwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6

NTGD3149CPower MOSFETComplementary, 20 V, +3.5/-2.7 A,TSOP-6 DualFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On ResistanceV(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response60 mW @ 4.5 VN-Ch Independently Connecte

NTGD3147FPower MOSFET andSchottky Diode-20 V, -2.5 A, P-Channel with SchottkyBarrier Diode, TSOP-6Featureshttp://onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate ChangeV(BR)DSS RDS(on) MaxID Max Low RDS(on)145 mW @ -4.5 V -2.2 A Low VF Schottky Diode-20 V Independently Connected Devices to Provide Design Flexibility200 mW @ -2.5 V -1.6 A

NTGD3133PPower MOSFET-20 V, -2.5 A, P-Channel, TSOP-6 DualFeatures Reduced Gate Charge for Fast Switching -2.5 V Gate Ratinghttp://onsemi.com Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design FlexibilityV(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device145 mW @ -4.5 V -2.2 A-20 VApplications200 mW @ -2.5 V -1.