NTGD3148NT1G Datasheet PDF and Equivalents Search

 ..1. Size:76K  onsemi
 ntgd3148n-d ntgd3148nt1g.pdf

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features Low Threshold Levels, VGS(th) ... See More ⇒

 ..2. Size:1766K  cn vbsemi
 ntgd3148nt1g.pdf

NTGD3148NT1G www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6 ... See More ⇒

 7.1. Size:120K  onsemi
 ntgd3149c.pdf

NTGD3149C Power MOSFET Complementary, 20 V, +3.5/-2.7 A, TSOP-6 Dual Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response 60 mW @ 4.5 V N-Ch Independently Connecte... See More ⇒

 7.2. Size:109K  onsemi
 ntgd3147f ntgd3147ft1g.pdf

NTGD3147F Power MOSFET and Schottky Diode -20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6 Features http //onsemi.com Fast Switching P-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 145 mW @ -4.5 V -2.2 A Low VF Schottky Diode -20 V Independently Connected Devices to Provide Design Flexibility 200 mW @ -2.5 V -1.6 A ... See More ⇒

 8.1. Size:105K  onsemi
 ntgd3133p.pdf

NTGD3133P Power MOSFET -20 V, -2.5 A, P-Channel, TSOP-6 Dual Features Reduced Gate Charge for Fast Switching -2.5 V Gate Rating http //onsemi.com Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 145 mW @ -4.5 V -2.2 A -20 V Applications 200 mW @ -2.5 V -1.... See More ⇒