2SK3262 Todos los transistores

 ..1. Size:301K  inchange semiconductor
 2sk3262.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK3262 FEATURES With TO-220F packaging High speed switching No secondary breadown Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 0.1. Size:135K  fuji
 2sk3262-01mr.pdf

 8.1. Size:732K  toshiba
 2sk3265.pdf

2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.72 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 700 V) Enhancement mode Vth = 2.0 4.0 V (VDS

 8.2. Size:171K  panasonic
 2sk3268.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET Features Package Avalanche energy capability guaranteed Code High-speed switching U-DL Low ON resistance Ron Pin Name No secondary breakdown 1 Gate Low-voltage drive 2 Drain High electrostatic energy capability 3 Source

 8.3. Size:882K  fuji
 2sk3264-01mr.pdf

 8.4. Size:45K  kexin
 2sk3269.pdf

SMD Type MOSFET N-Channel Enhacement Mode MOSFET 2SK3269 TO-263 Unit mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 4.5 V drive available Low on-state resistance RDS(on)1 =12m MAX. (VGS =10V, ID =18 A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.

 8.5. Size:941K  kexin
 2sk3269-zj.pdf

SMD Type MOSFET N-Channel MOSFET 2SK3269-ZJ Features VDS (V) = 100V ID = 25 A (VGS = 10V) RDS(ON) 100m (VGS = 10V) D Low on-resistance, Low Qg High avalanche resistance G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 25 A Puls

 8.6. Size:279K  inchange semiconductor
 2sk3265.pdf

isc N-Channel MOSFET Transistor 2SK3265 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.7. Size:286K  inchange semiconductor
 2sk3268.pdf

isc N-Channel MOSFET Transistor 2SK3268 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d