2SK3262 MOSFET. Datasheet pdf. Equivalent

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK3262FEATURESWith TO-220F packagingHigh speed switchingNo secondary breadownEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

FUJI POWER MOS-FET2SK3262-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators 2.54 UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25

2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.72 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOS FETs2SK3268Silicon N-channel power MOS FET Features Package Avalanche energy capability guaranteed Code High-speed switchingU-DL Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source

SMD Type MOSFETN-Channel Enhacement Mode MOSFET2SK3269TO-263Unit: mm+0.2Features4.57-0.2+0.11.27-0.14.5 V drive availableLow on-state resistanceRDS(on)1 =12m MAX. (VGS =10V, ID =18 A)+0.10.1max1.27-0.1Low gate chargeQG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.10.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.

SMD Type MOSFETN-Channel MOSFET2SK3269-ZJ Features VDS (V) = 100V ID = 25 A (VGS = 10V) RDS(ON) 100m (VGS = 10V)D Low on-resistance, Low Qg High avalanche resistanceGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Continuous Drain Current ID 25A Puls

isc N-Channel MOSFET Transistor 2SK3265FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3268FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d