30N50 Todos los transistores

 

30N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 30N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: TO3PN

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30N50 Datasheet (PDF)

0.1. mty30n50erev2x.pdf Size:237K _motorola

30N50
30N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY30N50E/DDesigner's Data SheetMTY30N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enhan

0.2. mte30n50e.pdf Size:197K _motorola

30N50
30N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTE30N50E/DAdvance InformationMTE30N50EISOTOP TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel

 0.3. mty30n50e.pdf Size:204K _motorola

30N50
30N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY30N50E/DDesigner's Data SheetMTY30N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enhan

0.4. mte30n50erev0a.pdf Size:229K _motorola

30N50
30N50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTE30N50E/DAdvance InformationMTE30N50EISOTOP TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel

 0.5. mtm30n50.pdf Size:54K _njs

30N50

0.6. zdx130n50.pdf Size:1207K _rohm

30N50
30N50

Data Sheet10V Drive Nch MOSFETZDX130N50 Structure Dimensions (Unit : mm)TO-220FMTO-220FMSilicon N-channel MOSFET10.0 3.2 4.510.0 3.2 4.52.82.8Features1) Low on-resistance. 1.21.21.31.32) High-speed switching.3) Gate-source voltage 0.80.82.54 2.54 0.75 2.62.54 2.54 0.75 2.6VGSS guaranteed to be 30V .(1) (2) (3)(1) (2) (3)4) Hig

0.7. ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf Size:336K _ixys

30N50
30N50

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

0.8. ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf Size:142K _ixys

30N50
30N50

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

0.9. ixfh30n50p ixft30n50p ixfv30n50p.pdf Size:320K _ixys

30N50
30N50

VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to

0.10. ixft30n50q.pdf Size:109K _ixys

30N50
30N50

VDSS ID25 RDS(on)HiPerFETTMPower MOSFETsIXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS =

0.11. ixfk30n50q ixfx30n50q.pdf Size:123K _ixys

30N50
30N50

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 30N50Q500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS

0.12. ixfr30n50q ixfr32n50q.pdf Size:91K _ixys

30N50
30N50

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 WIXFR 32N50Q 500 V 30 A 0.15 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyPreliminary dataISOPLUS 247TMSymbol Test Conditions Maximum RatingsE 153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V

0.13. ixfh30n50q.pdf Size:109K _ixys

30N50
30N50

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

0.14. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys

30N50
30N50

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

0.15. ixth30n45 ixth30n50.pdf Size:40K _ixys

30N50
30N50

Preliminary Data SheetVDSS ID25 RDS(on)MegaMOSTMFETIXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement ModeIXTH 30N50 500 V 30 A 0.17 TO-247 ADSymbol Test Conditions Maximum RatingsD (TAB)30N45 450 VVDSS TJ = 25C to 150C 30N50 500 V30N45 450 VVDGR TJ = 25C to 150C; RGS = 1 M 30N50 500 VTO-247 SMD( ...S )VGS Continuous 20 VVGSM Transient 30 VID

0.16. mty30n50e.pdf Size:196K _onsemi

30N50
30N50

MTY30N50EPreferred DevicePower MOSFET30 Amps, 500 VoltsN-Channel TO-264This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation30 AMPERESmodes. Designed for h

0.17. 30n50.pdf Size:211K _inchange_semiconductor

30N50
30N50

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 30N50FEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 250m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power Suppli

0.18. ixth30n50l.pdf Size:211K _inchange_semiconductor

30N50
30N50

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH30N50LFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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