30N50 Datasheet and Replacement

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 30N50FEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 250m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power Suppli

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY30N50E/DDesigner's Data SheetMTY30N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high30 AMPERESenergy in the avalanche and commutation modes. This new energy500 VOLTSe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTE30N50E/DAdvance InformationMTE30N50EISOTOP TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET30 AMPERESThis advanced TMOS EFET is designed to withstand high500 VOLTSenergy in the avalanche mode and switch efficiently. This new

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTE30N50E/DAdvance InformationMTE30N50EISOTOP TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET30 AMPERESThis advanced TMOS EFET is designed to withstand high500 VOLTSenergy in the avalanche mode and switch efficiently. This new

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY30N50E/DDesigner's Data SheetMTY30N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high30 AMPERESenergy in the avalanche and commutation modes. This new energy500 VOLTSe

Data Sheet10V Drive Nch MOSFETZDX130N50 Structure Dimensions (Unit : mm)TO-220FMTO-220FMSilicon N-channel MOSFET10.0 3.2 4.510.0 3.2 4.52.82.8Features1) Low on-resistance. 1.21.21.31.32) High-speed switching.3) Gate-source voltage 0.80.82.54 2.54 0.75 2.62.54 2.54 0.75 2.6VGSS guaranteed to be 30V .(1) (2) (3)(1) (2) (3)4) Hig

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

VDSS ID25 RDS(on)HiPerFETTMPower MOSFETsIXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS =

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 30N50Q500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS

Preliminary Data SheetVDSS ID25 RDS(on)MegaMOSTMFETIXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement ModeIXTH 30N50 500 V 30 A 0.17 TO-247 ADSymbol Test Conditions Maximum RatingsD (TAB)30N45 450 VVDSS TJ = 25C to 150C 30N50 500 V30N45 450 VVDGR TJ = 25C to 150C; RGS = 1 M 30N50 500 VTO-247 SMD( ...S )VGS Continuous 20 VVGSM Transient 30 VID

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 WIXFR 32N50Q 500 V 30 A 0.15 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyPreliminary dataISOPLUS 247TMSymbol Test Conditions Maximum RatingsE 153432VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 V

MTY30N50EPreferred DevicePower MOSFET30 Amps, 500 VoltsN-Channel TO-264This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradinghttp://onsemi.comperformance over time. In addition, this advanced Power MOSFET isdesigned to withstand high energy in the avalanche and commutation30 AMPERESmodes. Designed for h

BL30N50 Power MOSFET 1Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500

JFHM30N50P 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

JFAM30N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

PTW30N50EL 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 150m 30A RDS(ON),typ.=150 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW30N5

FuXin Semiconductor Co., Ltd.FXN30N50F Series Rev.AGeneral Description FeaturesThe FXN30N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap

FuXin Semiconductor Co., Ltd.FXN30N50T Series Rev.AGeneral Description FeaturesThe FXN30N50T uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH30N50LFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)