AOD2144 Todos los transistores

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 aod2144.pdf

AOD2144 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V)

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 aod2144.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOD2144 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

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 aod2146.pdf

AOD2146 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:263K  inchange semiconductor
 aod2146.pdf

isc N-Channel MOSFET Transistor AOD2146 FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:241K  aosemi
 aod210.pdf

AOD210 30V N-Channel MOSFET General Description Product Summary VDS The AOD210 uses Trench MOSFET technology that 30V 70A is uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance. Power losses are

 9.2. Size:381K  aosemi
 aod21357.pdf

AOD21357/AOI21357 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

 9.3. Size:381K  aosemi
 aod21357 aoi21357.pdf

AOD21357/AOI21357 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

 9.4. Size:491K  aosemi
 aod210v60e.pdf

AOD210V60E TM 600V, a MOSE N-Channel Power Transistor General Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max

 9.5. Size:264K  inchange semiconductor
 aod210.pdf

isc N-Channel MOSFET Transistor AOD210 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a