AOD214440V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V)

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD2144FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOD2146FEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are

AOD21357/AOI2135730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max

isc N-Channel MOSFET Transistor AOD210FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a