CSD30N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD30N30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 107 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 VQgⓘ - Carga de la puerta: 30 nC
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 720 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET CSD30N30
CSD30N30 Datasheet (PDF)
csd30n30.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor CSD30N30FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =2
csd30n70.pdf
CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R
csd30n55.pdf
CSD30N55N-Channel Trench Power MOSFETGeneral DescriptionThe CSD30N55 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 5V. This device is suitable for use as awide variety of applications.Schematic DiagramFeatures VDS = 30V,ID =80AR
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