CSD30N30 Datasheet and Replacement
Type Designator: CSD30N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
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CSD30N30 Datasheet (PDF)
csd30n30.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor CSD30N30FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =2
csd30n70.pdf

CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R
csd30n55.pdf

CSD30N55N-Channel Trench Power MOSFETGeneral DescriptionThe CSD30N55 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 5V. This device is suitable for use as awide variety of applications.Schematic DiagramFeatures VDS = 30V,ID =80AR
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2N3994 | BSB280N15NZ3G | 12N65KG-TF1-T | IRF9910 | R5016ANJ | ELM13401CA | DH150N12B
Keywords - CSD30N30 MOSFET datasheet
CSD30N30 cross reference
CSD30N30 equivalent finder
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History: 2N3994 | BSB280N15NZ3G | 12N65KG-TF1-T | IRF9910 | R5016ANJ | ELM13401CA | DH150N12B



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