All MOSFET. CSD30N30 Datasheet

 

CSD30N30 Datasheet and Replacement


   Type Designator: CSD30N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

 CSD30N30 substitution

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CSD30N30 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
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CSD30N30

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor CSD30N30FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =2

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 csd30n70.pdf pdf_icon

CSD30N30

CSD30N70 N-Channel Trench Power MOSFET General Description The CSD30N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 30V,ID =55A R

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 csd30n55.pdf pdf_icon

CSD30N30

CSD30N55N-Channel Trench Power MOSFETGeneral DescriptionThe CSD30N55 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 5V. This device is suitable for use as awide variety of applications.Schematic DiagramFeatures VDS = 30V,ID =80AR

Datasheet: 2SK3262 , 2SK428 , 30N50 , 80N06 , AM30N10 , AOD2144 , BUK437-500B , BUK637-500B , 2SK3568 , FCH067N65S3 , FCP067N65S3 , FCP099N65S3 , FCP190N65S3 , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , FDD9407 .

History: 3LN01SS | IPB156N22NFD

Keywords - CSD30N30 MOSFET datasheet

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