FDD9407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD9407
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 227 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Resistencia entre drenaje y fuente RDS(on): 0.002 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET FDD9407
FDD9407 Datasheet (PDF)
fdd9407 f085.pdf
August 2013FDD9407_F085N-Channel Power Trench MOSFET40V, 100A, 2.0m DFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80A D Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Ste
fdd9407.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD9407FEATURESWith TO-252(DPAK) packagingUIS capabilityHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain
fdd9407l-f085.pdf
FDD9407L-F085N-Channel Logic Level PowerTrench MOSFET 40 V, 100 A, 1.7 mDFeatures Typical RDS(on) = 1.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 96 nC at VGS = 10V, ID = 80 ADG UIS CapabilityG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252SApplications (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Int
fdd9407-f085.pdf
FDD9407-F085N-Channel Power Trench MOSFET40V, 100A, 2.0mDFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80AD Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integra
fdd9409 f085.pdf
May 2014FDD9409_F085N-Channel PowerTrench MOSFET40 V, 90 A, 3.2 m DFeaturesD Typ RDS(on) = 2.3m at VGS = 10V, ID = 80A G Typ Qg(tot) = 42nC at VGS = 10V, ID = 80AG UIS CapabilityS RoHS CompliantD-PAKTO-252S Qualified to AEC Q101 (TO-252)Applications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Controlwebsit
fdd9409l-f085.pdf
FDD9409L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 90 A, 2.6 mFeatures Typical RDS(on) = 2.1 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: NCES120R062T4 | NCES120R036T4 | NCEPB303GU | NCEPB302G | NCEP8818AS | NCEP8814AS | NCEP85T30T | NCEP85T30LL | NCEP85T25VD | NCEP85T25 | NCEP85T15D | NCEP85T10G | NCEP8588 | NCEP60T20LL | NCEP60T20D | NCEP60T18D