FDD9407 Todos los transistores

 

FDD9407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD9407
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de FDD9407 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDD9407 Datasheet (PDF)

 ..1. Size:371K  fairchild semi
fdd9407 f085.pdf pdf_icon

FDD9407

August 2013FDD9407_F085N-Channel Power Trench MOSFET40V, 100A, 2.0m DFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80A D Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Ste

 ..2. Size:208K  inchange semiconductor
fdd9407.pdf pdf_icon

FDD9407

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD9407FEATURESWith TO-252(DPAK) packagingUIS capabilityHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

 0.1. Size:440K  onsemi
fdd9407l-f085.pdf pdf_icon

FDD9407

FDD9407L-F085N-Channel Logic Level PowerTrench MOSFET 40 V, 100 A, 1.7 mDFeatures Typical RDS(on) = 1.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 96 nC at VGS = 10V, ID = 80 ADG UIS CapabilityG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252SApplications (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Int

 0.2. Size:609K  onsemi
fdd9407-f085.pdf pdf_icon

FDD9407

FDD9407-F085N-Channel Power Trench MOSFET40V, 100A, 2.0mDFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80AD Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integra

Otros transistores... CSD30N30 , FCH067N65S3 , FCP067N65S3 , FCP099N65S3 , FCP190N65S3 , FCP290N80 , FCPF125N65S3 , FCPF400N80ZCN , CS150N03A8 , FMP60N280S2HF , IPA032N06N3 , IPA041N04N , IPA057N06N3 , IPA093N06N3 , IPA60R120C7 , IPA60R170CFD7 , IPA60R1K0CE .

History: VBK362K | SQ1912AEEH | NCE8290 | IRFI9640GPBF | IXTA76N25T | DH033N04P | SFF75N08M

 

 
Back to Top

 


 
.