IPA032N06N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA032N06N3
   Código: 032N06N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 41 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 84 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 124 nC
   Tiempo de subida (tr): 120 nS
   Conductancia de drenaje-sustrato (Cd): 2200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0032 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET IPA032N06N3

IPA032N06N3 Datasheet (PDF)

..1. Size:542K infineon
ipa032n06n3 rev20.pdf

pe # ! ! TM #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 4 DQ H35

..2. Size:201K inchange semiconductor
ipa032n06n3.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA032N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

0.1. Size:332K infineon
ipa032n06n3g.pdf

Type IPA032N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.2 mW Optimized technology for DC/DC convertersID 84 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com

9.1. Size:393K infineon
ipa037n08n3g.pdf

IPA037N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.7 mW Optimized technology for DC/DC convertersID 75 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli

9.2. Size:335K infineon
ipa030n10n3g.pdf

IPA030N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 3 mW Excellent gate charge x R product (FOM)DS(on)ID 79 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen

9.3. Size:536K infineon
ipa037n08n3.pdf

# ! ! (TM) #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 7 DQ H35

9.4. Size:255K inchange semiconductor
ipa030n10n3.pdf

isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3FEATURESLow drain-source on-resistance:RDS(on) 3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

9.5. Size:256K inchange semiconductor
ipa037n08n3.pdf

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3FEATURESLow drain-source on-resistance:RDS(on) 3.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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