IPA60R280CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA60R280CFD7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 24 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO220F

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IPA60R280CFD7 datasheet

 ..1. Size:1140K  infineon
 ipa60r280cfd7.pdf pdf_icon

IPA60R280CFD7

IPA60R280CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such

 ..2. Size:201K  inchange semiconductor
 ipa60r280cfd7.pdf pdf_icon

IPA60R280CFD7

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280CFD7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATI

 4.1. Size:1432K  infineon
 ipa60r280c6.pdf pdf_icon

IPA60R280CFD7

MOSFET + =L9D - PA

 4.2. Size:1587K  infineon
 ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf pdf_icon

IPA60R280CFD7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according

MOSTRAR MÁS

Otros transistores... IPA032N06N3, IPA041N04N, IPA057N06N3, IPA093N06N3, IPA60R120C7, IPA60R170CFD7, IPA60R1K0CE, IPA60R1K5CE, STP65NF06, IPA60R280P7, IPA60R600P7, IPA65R1K0CE, IPA65R400CE, IPAN50R500CE, IPAN60R800CE, IPB073N15N5, IPB090N06N3