IPA65R400CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA65R400CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET IPA65R400CE

IPA65R400CE Datasheet (PDF)

..1. Size:1066K infineon
ipa65r400ce.pdf

IPA65R400CEMOSFETTO-220 FP650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The resulting devices provide all benefits of a f

..2. Size:201K inchange semiconductor
ipa65r400ce.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R400CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

7.1. Size:4487K infineon
ipa65r420cfd ipb65r420cfd ipi65r420cfd ipp65r420cfd ipw65r420cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R420CFD Data SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R420CFD , IPB65R420CFD , IPP65R420CFDIPA65R420CFD , IPD65R420CFD , IPI65R420CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology f

7.2. Size:1675K infineon
ipw65r420cfd ipb65r420cfd ipp65r420cfd ipa65r420cfd ipd65r420cfd ipi65r420cfd.pdf

MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C DD t eet e 4Rev. 2.6 in lPower Management & MultimarketIn ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C DI 4 C D I D 4 C D I I 4 C D O 47 D O 1 DescriptinC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin i

7.3. Size:225K inchange semiconductor
ipa65r420cfd.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R420CFDFEATURESWith TO-220F PackageDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: