IPA65R400CE Datasheet and Replacement

IPA65R400CEMOSFETTO-220 FP650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The resulting devices provide all benefits of a f

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R400CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R420CFD Data SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R420CFD , IPB65R420CFD , IPP65R420CFDIPA65R420CFD , IPD65R420CFD , IPI65R420CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology f

MO Met l Oxi e emi n t iel e t n i t C lMO C D C lMO C D e n i t I x 4 C DD t eet e 4Rev. 2.6 in lPower Management & MultimarketIn ti l & M ltim ket C lMO C D e n i t I 4 C D I 4 C D I 4 C DI 4 C D I D 4 C D I I 4 C D O 47 D O 1 DescriptinC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin i

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R420CFDFEATURESWith TO-220F PackageDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(