IPB073N15N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPB073N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Q )rr 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synch

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB073N15N5FEATURESWith TO-263(D2PAK) packagingVery low reverse recovery chargeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

IPP07N03LIPB07N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 5.9 m Logic LevelID 80 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f

IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

pe % # ! % (>.;?6?@%>EFeatures 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*- 7 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 G O D n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86?

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

Isc N-Channel MOSFET Transistor IPB072N15N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source