IPB073N15N5 - описание и поиск аналогов

IPB073N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q ) rr 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synch

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB073N15N5 FEATURES With TO-263(D2PAK) packaging Very low reverse recovery charge High speed switching Very low on-resistence Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

IPP07N03L IPB07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 5.9 m Logic Level ID 80 A Low On-Resistance RDS(on) P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ideal for f

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1

pe % # ! % (>.;?6?@ %>E Features 4 D Q 2CD CG D49 ?8 ') - . 7@B -'*- 7 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 G O D n) Q F2=2?496 D6CD65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86?

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 7.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

Isc N-Channel MOSFET Transistor IPB072N15N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source