IPB073N15N5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPB073N15N5
Маркировка: 073N15N5
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 214 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.6 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 114 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 49 nC
trⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 900 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0073 Ohm
Тип корпуса: TO263
Аналог (замена) для IPB073N15N5
IPB073N15N5 Datasheet (PDF)
ipb073n15n5.pdf
IPB073N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Q )rr 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synch
ipb073n15n5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB073N15N5FEATURESWith TO-263(D2PAK) packagingVery low reverse recovery chargeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
ipb070n06lg ipp070n06lg7.pdf
IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C
ipp07n03l ipb07n03l.pdf
IPP07N03LIPB07N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 5.9 m Logic LevelID 80 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f
ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf
IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1
ipb075n04l.pdf
pe % # ! % (>.;?6?@%>EFeatures 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*- 7 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 G O D n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86?
ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf
IPB072N15N3 G IPP075N15N3 GIPI075N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf
IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar
ipb072n15n3g.pdf
Isc N-Channel MOSFET Transistor IPB072N15N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IPB081N06L3G
History: IPB081N06L3G
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918