IPB60R280P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB60R280P6
Código: 6R280P6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 104 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 13.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 25.5 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 54 pF
Resistencia entre drenaje y fuente RDS(on): 0.28 Ohm
Paquete / Cubierta: TO263
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IPB60R280P6 Datasheet (PDF)
ipb60r280p6.pdf
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ipb60r280p6.pdf
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ipb60r280p7.pdf
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ipb60r280p7.pdf
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ipb60r280c6.pdf
Isc N-Channel MOSFET Transistor IPB60R280C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
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