IPB60R280P6 PDF and Equivalents Search

 

IPB60R280P6 Specs and Replacement

Type Designator: IPB60R280P6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO263

IPB60R280P6 substitution

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IPB60R280P6 datasheet

 ..1. Size:2608K  infineon
ipb60r280p6.pdf pdf_icon

IPB60R280P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 ..2. Size:2621K  infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf pdf_icon

IPB60R280P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 ..3. Size:205K  inchange semiconductor
ipb60r280p6.pdf pdf_icon

IPB60R280P6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB60R280P6 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

 4.1. Size:1120K  infineon
ipb60r280p7.pdf pdf_icon

IPB60R280P6

IPB60R280P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

Detailed specifications: IPA60R600P7, IPA65R1K0CE, IPA65R400CE, IPAN50R500CE, IPAN60R800CE, IPB073N15N5, IPB090N06N3, IPB156N22NFD, K2611, IPD30N03S2L, IPP60R060P7, IPP60R070CFD7, IRF3205STRLPBF, IRF7473TRPBF, IRFI3306G, IRFI4228, IRFI7440G

Keywords - IPB60R280P6 MOSFET specs

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