IPD30N03S2L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD30N03S2L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 760 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de IPD30N03S2L MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPD30N03S2L datasheet

 ..1. Size:207K  inchange semiconductor
 ipd30n03s2l.pdf pdf_icon

IPD30N03S2L

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPD30N03S2L FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:151K  infineon
 ipd30n03s2l-07.pdf pdf_icon

IPD30N03S2L

IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.7 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2

 0.2. Size:152K  infineon
 ipd30n03s2l-20.pdf pdf_icon

IPD30N03S2L

IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 20 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L

 0.3. Size:151K  infineon
 ipd30n03s2l-10.pdf pdf_icon

IPD30N03S2L

IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 10 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L

MOSTRAR MÁS

Otros transistores... IPA65R1K0CE, IPA65R400CE, IPAN50R500CE, IPAN60R800CE, IPB073N15N5, IPB090N06N3, IPB156N22NFD, IPB60R280P6, EMB04N03H, IPP60R060P7, IPP60R070CFD7, IRF3205STRLPBF, IRF7473TRPBF, IRFI3306G, IRFI4228, IRFI7440G, IRFI7446G