2N7639-GA Todos los transistores

 

2N7639-GA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7639-GA
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 250 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 840 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO-257
 

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2N7639-GA Datasheet (PDF)

 ..1. Size:845K  genesic
 2n7639-ga.pdf pdf_icon

2N7639-GA

2N7639-GANormally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 9.1. Size:467K  genesic
 2n7637-ga.pdf pdf_icon

2N7639-GA

2N7637-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 9.2. Size:504K  genesic
 2n7635-ga.pdf pdf_icon

2N7639-GA

2N7635-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po

 9.3. Size:462K  genesic
 2n7638-ga.pdf pdf_icon

2N7639-GA

2N7638-GANormally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea

MOSTRAR MÁS

Otros transistores... IRFI4228 , IRFI7440G , IRFI7446G , IRFI7536G , IRFIP054 , 2N7636-GA , 2N7637-GA , 2N7638-GA , IRF540 , 2N7640-GA , IRFZ24NLPBF , 2N7635-GA , IRLB4132 , IRLI3705 , IXFA20N85XHV , IXFA34N65X2 , IXFH20N85X .

History: IPS60R1K0PFD7S | SQP120N10-3M8

 

 
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