2N7635-GA Todos los transistores

 

2N7635-GA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7635-GA

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 250 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.425 Ohm

Encapsulados: TO-257

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2N7635-GA datasheet

 ..1. Size:504K  genesic
2n7635-ga.pdf pdf_icon

2N7635-GA

2N7635-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po

 9.1. Size:845K  genesic
2n7639-ga.pdf pdf_icon

2N7635-GA

2N7639-GA Normally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 9.2. Size:467K  genesic
2n7637-ga.pdf pdf_icon

2N7635-GA

2N7637-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

 9.3. Size:462K  genesic
2n7638-ga.pdf pdf_icon

2N7635-GA

2N7638-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea

Otros transistores... IRFI7536G , IRFIP054 , 2N7636-GA , 2N7637-GA , 2N7638-GA , 2N7639-GA , 2N7640-GA , IRFZ24NLPBF , IRFP460 , IRLB4132 , IRLI3705 , IXFA20N85XHV , IXFA34N65X2 , IXFH20N85X , IXFH30N85X , IXFP12N65X2M , IXFP22N65X2M .

History: JCS10N70C | STW15NA50

 

 

 


History: JCS10N70C | STW15NA50

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