2N7635-GA - аналоги, параметры транзистора - Справочник транзисторов

2N7635-GA даташит

..1. Size:504K genesic
2n7635-ga.pdf pdf_icon

2N7635-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.7 V ID = 4 A RDS(ON) = 425 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Po

9.1. Size:845K genesic
2n7639-ga.pdf pdf_icon

2N7639-GA Normally OFF Silicon Carbide VDS = 600 V Junction Transistor VDS(ON) = 1.3 V ID = 20 A RDS(ON) = 65 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

9.2. Size:467K genesic
2n7637-ga.pdf pdf_icon

2N7637-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.2 V ID = 7 A RDS(ON) = 170 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Electrically isolated base-plate Gate oxide free SiC switch Suitable for connecting an anti-parallel diode G

9.3. Size:462K genesic
2n7638-ga.pdf pdf_icon

2N7638-GA Normally OFF Silicon Carbide VDS = 650 V Junction Transistor VDS(ON) = 1.4 V ID = 8 A RDS(ON) = 180 m Features Package 250 C maximum operating temperature RoHS Compliant Temperature independent switching performance D Gate oxide free SiC switch S Suitable for connecting an anti-parallel diode Positive temperature coefficient for ea