IXFH30N85X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFH30N85X
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 695 W
Voltaje máximo drenador - fuente |Vds|: 850 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5.5 V
Carga de la puerta (Qg): 68 nC
Tiempo de subida (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 2540 pF
Resistencia entre drenaje y fuente RDS(on): 0.22 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET IXFH30N85X
IXFH30N85X Datasheet (PDF)
ixfh30n85x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT30N85XHVPower MOSFET ID25 = 30AIXFH30N85X RDS(on) 220m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-
ixfh30n85x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH30N85XFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ixfh30n50p ixft30n50p ixfv30n50p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to
ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC
ixfh30n60x ixfq30n60x ixft30n60x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150
ixfh30n50q.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC
ixfh30n60p ixfv30n60p ixft30n60p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IXFH 30N60P VDSS = 600 VPolarHVTM HiPerFETIXFT 30N60P ID25 = 30 APower MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXFV 30N60PS trr 200 nsFast Recovery DiodeAvalanche RatedPLUS220 (IXFV)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .