IXFH30N85X MOSFET Datasheet: N-Ch, 850V, 30A. Full specification with pinout and replacement list

IXFH30N85X Specs and Replacement

Type Designator: IXFH30N85X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 695 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 2540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO247

IXFH30N85X substitution

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IXFH30N85X datasheet

..1. Size:258K ixys
ixfh30n85x.pdf pdf_icon

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT30N85XHV Power MOSFET ID25 = 30A IXFH30N85X RDS(on) 220m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-... See More ⇒

..2. Size:212K inchange semiconductor
ixfh30n85x.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH30N85X FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

7.1. Size:320K ixys
ixfh30n50p ixft30n50p ixfv30n50p.pdf pdf_icon

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to ... See More ⇒

7.2. Size:110K ixys
ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC ... See More ⇒