MDP1921 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDP1921
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 223 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28.8 nS
Cossⓘ - Capacitancia de salida: 1300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET MDP1921
MDP1921 Datasheet (PDF)
mdp1921.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1921FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
mdp1921th.pdf
MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1921 is suitable device for DC/DC Converter
mdp1921th.pdf
isc N-Channel MOSFET Transistor MDP1921THFEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
mdp1922th.pdf
MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4m General Description Features The MDP1922 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1922 is suitable device for DC/DC Converter
mdp1923th.pdf
MDP1923 Single N-channel Trench MOSFET 100V, 69A, 13.9m General Description Features The MDP1923 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 69A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1923 is suitable device for Synchronous
mdp1922.pdf
isc N-Channel MOSFET Transistor MDP1922FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for DC/DC converters and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
mdp1922th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1922THFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
mdp1923th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1923THFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918