MDP1921 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDP1921
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 223 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 100 nC
Время нарастания (tr): 28.8 ns
Выходная емкость (Cd): 1300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: TO220
MDP1921 Datasheet (PDF)
mdp1921.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1921FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
mdp1921th.pdf
MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1921 is suitable device for DC/DC Converter
mdp1921th.pdf
isc N-Channel MOSFET Transistor MDP1921THFEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
mdp1922th.pdf
MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4m General Description Features The MDP1922 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1922 is suitable device for DC/DC Converter
mdp1923th.pdf
MDP1923 Single N-channel Trench MOSFET 100V, 69A, 13.9m General Description Features The MDP1923 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 69A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1923 is suitable device for Synchronous
mdp1922.pdf
isc N-Channel MOSFET Transistor MDP1922FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for DC/DC converters and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
mdp1922th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1922THFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
mdp1923th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1923THFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate
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