MDP1921 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDP1921
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 223 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 100 nC
trⓘ - Время нарастания: 28.8 ns
Cossⓘ - Выходная емкость: 1300 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220
MDP1921 Datasheet (PDF)
mdp1921.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1921FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
mdp1921th.pdf
MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1921 is suitable device for DC/DC Converter
mdp1921th.pdf
isc N-Channel MOSFET Transistor MDP1921THFEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
mdp1922th.pdf
MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4m General Description Features The MDP1922 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1922 is suitable device for DC/DC Converter
mdp1923th.pdf
MDP1923 Single N-channel Trench MOSFET 100V, 69A, 13.9m General Description Features The MDP1923 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 69A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1923 is suitable device for Synchronous
mdp1922.pdf
isc N-Channel MOSFET Transistor MDP1922FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for DC/DC converters and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
mdp1922th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1922THFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
mdp1923th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1923THFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N7002BKM
History: 2N7002BKM
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918