2SK3262-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3262-01MR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 290 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO220F

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2SK3262-01MR Datasheet (PDF)

1.1. 2sk3262-01mr.pdf Size:135K _update-mosfet

FUJI POWER MOS-FET 2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25�

3.1. 2sk3262.pdf Size:301K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK3262 ·FEATURES ·With TO-220F packaging ·High speed switching ·No secondary breadown ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA

4.1. 2sk3269.pdf Size:45K _update

SMD Type MOSFET N-Channel Enhacement Mode MOSFET 2SK3269 TO-263 Unit: mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 4.5 V drive available Low on-state resistance RDS(on)1 =12m MAX. (VGS =10V, ID =18 A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.

4.2. 2sk3268.pdf Size:171K _update

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET ■ Features ■ Package • Avalanche energy capability guaranteed • Code • High-speed switching U-DL • Low ON resistance Ron • Pin Name • No secondary breakdown 1: Gate • Low-voltage drive 2: Drain • High electrostatic energy capability 3: Source

4.3. 2sk3265.pdf Size:732K _toshiba

2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.72 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10

4.4. 2sk3264-01mr.pdf Size:882K _fuji

4.5. 2sk3269-zj.pdf Size:941K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK3269-ZJ ■ Features ● VDS (V) = 100V ● ID = 25 A (VGS = 10V) ● RDS(ON) ＜ 100mΩ (VGS = 10V) D ● Low on-resistance, Low Qg ● High avalanche resistance G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 25 A Puls

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