2SK3262-01MR Todos los transistores

 

2SK3262-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3262-01MR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 290 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO220F

Búsqueda de reemplazo de MOSFET 2SK3262-01MR

 

2SK3262-01MR Datasheet (PDF)

1.1. 2sk3262-01mr.pdf Size:135K _update-mosfet

2SK3262-01MR
2SK3262-01MR

FUJI POWER MOS-FET 2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) 3. Source DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25

3.1. 2sk3262.pdf Size:301K _inchange_semiconductor

2SK3262-01MR
2SK3262-01MR

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK3262 ·FEATURES ·With TO-220F packaging ·High speed switching ·No secondary breadown ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA

 4.1. 2sk3269.pdf Size:45K _update

2SK3262-01MR

SMD Type MOSFET N-Channel Enhacement Mode MOSFET 2SK3269 TO-263 Unit: mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 4.5 V drive available Low on-state resistance RDS(on)1 =12m MAX. (VGS =10V, ID =18 A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.

4.2. 2sk3268.pdf Size:171K _update

2SK3262-01MR
2SK3262-01MR

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET ■ Features ■ Package • Avalanche energy capability guaranteed • Code • High-speed switching U-DL • Low ON resistance Ron • Pin Name • No secondary breakdown 1: Gate • Low-voltage drive 2: Drain • High electrostatic energy capability 3: Source

 4.3. 2sk3265.pdf Size:732K _toshiba

2SK3262-01MR
2SK3262-01MR

2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.72 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10

4.4. 2sk3264-01mr.pdf Size:882K _fuji

2SK3262-01MR
2SK3262-01MR

 4.5. 2sk3269-zj.pdf Size:941K _kexin

2SK3262-01MR
2SK3262-01MR

SMD Type MOSFET N-Channel MOSFET 2SK3269-ZJ ■ Features ● VDS (V) = 100V ● ID = 25 A (VGS = 10V) ● RDS(ON) < 100mΩ (VGS = 10V) D ● Low on-resistance, Low Qg ● High avalanche resistance G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 25 A Puls

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


2SK3262-01MR
  2SK3262-01MR
  2SK3262-01MR
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WMH07N65C2 | WMG07N65C2 | WMP07N65C2 | WMO07N65C2 | WMM07N65C2 | WML07N65C2 | TP0610T | ME7170-G | LTP70N06 | HY1707PM | HY1707PS | HY1707MF | HY1707I | HY1707B | HY1707M |

 

 

 
Back to Top