NTGS3130NT1G Todos los transistores

 

NTGS3130NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTGS3130NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.3 nS
   Cossⓘ - Capacitancia de salida: 169 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

NTGS3130NT1G Datasheet (PDF)

 ..1. Size:87K  onsemi
ntgs3130n ntgs3130nt1g.pdf pdf_icon

NTGS3130NT1G

NTGS3130NPower MOSFET20 V, 5.6 A SingleN-Channel, TSOP-6Features Leading Edge Trench Technology for Low On Resistancehttp://onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 PackageV(BR)DSS RDS(on) mAX ID Max This is a Pb-Free Device24 mW @ 4.5 V 5.6 AApplications20 V DC-DC Converters32 mW @ 2.5 V 4.9 A Lithium Ion Ba

 7.1. Size:201K  onsemi
ntgs3136p nvgs3136p.pdf pdf_icon

NTGS3130NT1G

NTGS3136P, NVGS3136PMOSFET Power, Single,P-Channel, TSOP-6-20 V, -5.8 AFeatureswww.onsemi.com Low RDS(on) in TSOP-6 Package 1.8 V Gate RatingV(BR)DSS RDS(ON) TYP ID MAX Fast Switching25 mW @ -4.5 V -5.1 A NV Prefix for Automotive and Other Applications Requiring Unique-20 V 32 mW @ -2.5 V -4.5 ASite and Control Change Requirements; AEC-Q101 Qualified an

 7.2. Size:113K  onsemi
ntgs3136p-d ntgs3136pt1g.pdf pdf_icon

NTGS3130NT1G

NTGS3136PPower MOSFET-20 V, -5.8 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) TYP ID MAXApplications25 mW @ -4.5 V -5.1 A Optimized for Battery and Load Management Applications in-20 V 32 mW @ -2.5 V -4.5 APortable Equipment41 mW @ -1.8 V -

 7.3. Size:1720K  cn vbsemi
ntgs3136pt1g.pdf pdf_icon

NTGS3130NT1G

NTGS3136PT1Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

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