NTHD4N02FT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTHD4N02FT1
   Código: C2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.91 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 2.6 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: CHIPFET

Búsqueda de reemplazo de MOSFET NTHD4N02FT1

NTHD4N02FT1 Datasheet (PDF)

..1. Size:72K onsemi
nthd4n02f-d nthd4n02ft1.pdf

NTHD4N02FPower MOSFET andSchottky Diode20 V, 3.9 A, N-Channel, with 3.7 ASchottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 Package with Better ThermalsV(BR)DSS RDS(on) TYP ID MAX Super Low Gate Charge MOSFET60 mW @ 4.5 V Ultra Low VF Schottky 20 V 3.9 A80 mW @

9.1. Size:83K onsemi
nthd4p02f nthd4p02ft1g.pdf

NTHD4P02FPower MOSFET andSchottky Diode-20 V, -3.0 A, Single P-Channel with3.0 A Schottky Barrier Diode, ChipFETtFeatureshttp://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 Package with Similar ThermalV(BR)DSS RDS(on) TYP ID MAXCharacteristics-130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu

9.2. Size:74K onsemi
nthd4401p-d.pdf

NTHD4401PPower MOSFET-20 V, -3.0 A, Dual P-Channel, ChipFETtFeatures Low RDS(on) and Fast Switching Speed in a ChipFET Packagehttp://onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where HeatTransfer is RequiredV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available130 mW @ -4.5 V-20 V

9.3. Size:67K onsemi
nthd4502n-d.pdf

NTHD4502NPower MOSFET30 V, 3.9 A, Dual N-Channel ChipFETtFeatures Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6.http://onsemi.comIdeal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal forV(BR)DSS RDS(on) TYP ID

9.4. Size:105K onsemi
nthd4502n.pdf

9.5. Size:120K onsemi
nthd4508n.pdf

NTHD4508NMOSFET Power, Dual,N-Channel, ChipFET20 V, 4.1 AFeatureshttp://onsemi.com Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(on) TYP ID MAX Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available 60 mW @ 4.5 V20 V 4.1 A80 mW @ 2.5 VApplications

9.6. Size:83K onsemi
nthd4p02f.pdf

9.7. Size:55K onsemi
nthd4508n-d.pdf

NTHD4508NPower MOSFET20 V, 4.1 A, Dual N-Channel ChipFETtFeatures Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6http://onsemi.com Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAXApplications60 mW @ 4.5 V20 V 4.1 A DC-DC Buck/Boost Co

9.8. Size:64K onsemi
nthd4102p-d.pdf

NTHD4102PPower MOSFET-20 V, -4.1 A, Dual P-Channel ChipFETtFeatures Offers an Ultra Low RDS(ON) Solution in the ChipFET Package http://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(ON) TYP ID MAX Low Profile (

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