NTHD4N02FT1 Datasheet. Equivalente

 ..1. Size:72K  onsemi
 nthd4n02f-d nthd4n02ft1.pdf

NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N-Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Better Thermals V(BR)DSS RDS(on) TYP ID MAX Super Low Gate Charge MOSFET 60 mW @ 4.5 V Ultra Low VF Schottky 20 V 3.9 A 80 mW @

 9.1. Size:83K  onsemi
 nthd4p02f nthd4p02ft1g.pdf

NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu

 9.2. Size:74K  onsemi
 nthd4401p-d.pdf

NTHD4401P Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFETt Features Low RDS(on) and Fast Switching Speed in a ChipFET Package http //onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 130 mW @ -4.5 V -20 V

 9.3. Size:67K  onsemi
 nthd4502n-d.pdf

NTHD4502N Power MOSFET 30 V, 3.9 A, Dual N-Channel ChipFETt Features Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. http //onsemi.com Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for V(BR)DSS RDS(on) TYP ID

 9.4. Size:105K  onsemi
 nthd4502n.pdf

NTHD4502N Power MOSFET 30 V, 3.9 A, Dual N-Channel ChipFETt Features Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6. http //onsemi.com Ideal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for V(BR)DSS RDS(on) TYP ID

 9.5. Size:120K  onsemi
 nthd4508n.pdf

NTHD4508N MOSFET Power, Dual, N-Channel, ChipFET 20 V, 4.1 A Features http //onsemi.com Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(on) TYP ID MAX Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available 60 mW @ 4.5 V 20 V 4.1 A 80 mW @ 2.5 V Applications

 9.6. Size:83K  onsemi
 nthd4p02f.pdf

NTHD4P02F Power MOSFET and Schottky Diode -20 V, -3.0 A, Single P-Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package with Similar Thermal V(BR)DSS RDS(on) TYP ID MAX Characteristics -130 mW @ -4.5 V Independent Pinout to each Device to Ease Circu

 9.7. Size:55K  onsemi
 nthd4508n-d.pdf

NTHD4508N Power MOSFET 20 V, 4.1 A, Dual N-Channel ChipFETt Features Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 http //onsemi.com Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX Applications 60 mW @ 4.5 V 20 V 4.1 A DC-DC Buck/Boost Co

 9.8. Size:64K  onsemi
 nthd4102p-d.pdf

NTHD4102P Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFETt Features Offers an Ultra Low RDS(ON) Solution in the ChipFET Package http //onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(ON) TYP ID MAX Low Profile (