NTK3134NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTK3134NT1G
Código: KF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.31 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 6 V
Corriente continua de drenaje |Id|: 0.75 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Tiempo de subida (tr): 4.8 nS
Conductancia de drenaje-sustrato (Cd): 13 pF
Resistencia entre drenaje y fuente RDS(on): 0.35 Ohm
Paquete / Cubierta: SOT-723
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NTK3134NT1G Datasheet (PDF)
ntk3134n-d ntk3134nt1g.pdf
NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureshttp://onsemi.com N channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These
ntk3134n.pdf
NTK3134NPower MOSFET20 V, 890 mA, Single N-Channel withESD Protection, SOT-723Featureswww.onsemi.com N-Channel Switch with Low RDS(on)V(BR)DSS RDS(on) TYP ID Max 44% Smaller Footprint and 38% Thinner than SC890.20 W @ 4.5 V 890 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating Operated at Low Logic Level Gate Drive 0.26 W @ 2.5 V 790 mA20 V These Dev
ntk3139p-d ntk3139pt1g.pdf
NTK3139PPower MOSFET-20 V, -780 mA, Single P-Channel withESD Protection, SOT-723Featureshttp://onsemi.com P-channel Switch with Low RDS(on) 44% Smaller Footprint and 38% Thinner than SC-89 V(BR)DSS RDS(on) TYP ID Max Low Threshold Levels Allowing 1.5 V RDS(on) Rating 0.38 W @ -4.5 V -780 mA Operated at Low Logic Level Gate Drive0.52 W @ -2.5 V -660 mA-20 V
ntk3139p.pdf
NTK3139PMOSFET Power, Single,P-Channel with ESDProtection, SOT-723-20 V, -780 mAwww.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID Max P-channel Switch with Low RDS(on)0.38 W @ -4.5 V -780 mA 44% Smaller Footprint and 38% Thinner than SC-890.52 W @ -2.5 V -660 mA Low Threshold Levels Allowing 1.5 V RDS(on) Rating-20 V0.70 W @ -1.8 V -100 mA Operated at
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
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