NTLJS2103PTAG Todos los transistores

 

NTLJS2103PTAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTLJS2103PTAG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: WDFN6
     - Selección de transistores por parámetros

 

NTLJS2103PTAG Datasheet (PDF)

 ..1. Size:125K  onsemi
ntljs2103ptag ntljs2103ptbg.pdf pdf_icon

NTLJS2103PTAG

NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package

 4.1. Size:129K  onsemi
ntljs2103p.pdf pdf_icon

NTLJS2103PTAG

NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package

 9.1. Size:84K  onsemi
ntljs4114n.pdf pdf_icon

NTLJS2103PTAG

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

 9.2. Size:325K  onsemi
ntljs17d0p03p8z.pdf pdf_icon

NTLJS2103PTAG

MOSFET - Power, SingleP-Channel, WDFN6-30 VProduct PreviewNTLJS17D0P03P8Zwww.onsemi.comFeatures Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHSCompliant 11.3 mW @ -10 V-30 V -11.7 A21.3 mW @ -4.5 VApplications Battery Management

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History: AOD4182 | IRL3705Z | ATP107 | IPI47N10S-33 | NTD65N03R-035 | UPA1930 | TK4P60D

 

 
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