NTLJS2103PTAG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTLJS2103PTAG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: WDFN6

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NTLJS2103PTAG datasheet

 ..1. Size:125K  onsemi
ntljs2103ptag ntljs2103ptbg.pdf pdf_icon

NTLJS2103PTAG

NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal V(BR)DSS RDS(on) TYP ID MAX (Note 1) Conduction 2x2 mm Footprint Same as SC-88 Package 25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package

 4.1. Size:129K  onsemi
ntljs2103p.pdf pdf_icon

NTLJS2103PTAG

NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal V(BR)DSS RDS(on) TYP ID MAX (Note 1) Conduction 2x2 mm Footprint Same as SC-88 Package 25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package

 9.1. Size:84K  onsemi
ntljs4114n.pdf pdf_icon

NTLJS2103PTAG

NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V

 9.2. Size:325K  onsemi
ntljs17d0p03p8z.pdf pdf_icon

NTLJS2103PTAG

MOSFET - Power, Single P-Channel, WDFN6 -30 V Product Preview NTLJS17D0P03P8Z www.onsemi.com Features Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHS Compliant 11.3 mW @ -10 V -30 V -11.7 A 21.3 mW @ -4.5 V Applications Battery Management

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