NTLJS2103PTAG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTLJS2103PTAG
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 300 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: WDFN6
Аналог (замена) для NTLJS2103PTAG
NTLJS2103PTAG Datasheet (PDF)
ntljs2103ptag ntljs2103ptbg.pdf

NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package
ntljs2103p.pdf

NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package
ntljs4114n.pdf

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V
ntljs17d0p03p8z.pdf

MOSFET - Power, SingleP-Channel, WDFN6-30 VProduct PreviewNTLJS17D0P03P8Zwww.onsemi.comFeatures Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHSCompliant 11.3 mW @ -10 V-30 V -11.7 A21.3 mW @ -4.5 VApplications Battery Management
Другие MOSFET... NTLJD3182FZTBG , NTLJF3117PT1G , NTLJF3117PTAG , NTLJF3118NTAG , NTLJF4156NT1G , NTLJF4156NTAG , NTLJS1102PTAG , NTLJS1102PTBG , 10N60 , NTLJS2103PTBG , NTLJS3113PT1G , NTLJS3113PTAG , NTLJS3180PZTBG , NTLJS3A18PZ , NTLJS4114NT1G , NTLJS4149PTAG , NTLJS4159NT1G .
History: NVMFD5C466NL | APT50M50L2LLG
History: NVMFD5C466NL | APT50M50L2LLG



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