NTLJS2103PTAG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTLJS2103PTAG
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 300 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: WDFN6
Аналог (замена) для NTLJS2103PTAG
NTLJS2103PTAG Datasheet (PDF)
ntljs2103ptag ntljs2103ptbg.pdf
NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package
ntljs2103p.pdf
NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package
ntljs4114n.pdf
NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V
ntljs17d0p03p8z.pdf
MOSFET - Power, SingleP-Channel, WDFN6-30 VProduct PreviewNTLJS17D0P03P8Zwww.onsemi.comFeatures Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHSCompliant 11.3 mW @ -10 V-30 V -11.7 A21.3 mW @ -4.5 VApplications Battery Management
ntljs3180pz ntljs3180pztbg.pdf
NTLJS3180PZPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,ESD, 2x2 mm WDFN PackageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm PackageV(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package38 mW @ -4.5 V Low Profile (
ntljs4149 ntljs4149ptag.pdf
NTLJS4149PPower MOSFET-30 V, -5.9 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX Low Profile (
ntljs1102p ntljs1102ptag ntljs1102ptbg.pdf
NTLJS1102PPower MOSFET-8 V, -8.1 A, mCOOL] Single P-Channel,2x2 mm, WDFN packageFeatures WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Lowest RDS(on) in 2 x 2 mm PackageV(BR)DSS RDS(on) MAX ID MAX 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate36 mW @ -4.5 V -6.2 ADrive 2 x 2 mm Footprint Same as SC-
ntljs3a18pz.pdf
NTLJS3A18PZPower MOSFET-20 V, -8.2 A, mCoolt Single P-Channel,2.0x2.0x0.8 mm WDFN PackageFeatures WDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on)18 mW @ -4.5 V ESD Diode-Protected Gate25 mW @ -2.5 V-20 V -8.2 A T
ntljs4114nt1g.pdf
NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V
ntljs3113pt1g ntljs3113ptag.pdf
NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @
ntljs4159n ntljs4159nt1g.pdf
NTLJS4159NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V
ntljs3113p.pdf
NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @
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History: HM4887
History: HM4887
Список транзисторов
Обновления
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