NTLJS4159NT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTLJS4159NT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.4 nS

Cossⓘ - Capacitancia de salida: 115.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: WDFN6

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NTLJS4159NT1G datasheet

 ..1. Size:78K  onsemi
 ntljs4159n ntljs4159nt1g.pdf pdf_icon

NTLJS4159NT1G

NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V

 7.1. Size:84K  onsemi
 ntljs4114n.pdf pdf_icon

NTLJS4159NT1G

NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V

 7.2. Size:91K  onsemi
 ntljs4149 ntljs4149ptag.pdf pdf_icon

NTLJS4159NT1G

NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features WDFN Package with Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 Package V(BR)DSS RDS(on) MAX Low Profile (

 7.3. Size:115K  onsemi
 ntljs4114nt1g.pdf pdf_icon

NTLJS4159NT1G

NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V

MOSTRAR MÁS

Otros transistores... NTLJS2103PTAG, NTLJS2103PTBG, NTLJS3113PT1G, NTLJS3113PTAG, NTLJS3180PZTBG, NTLJS3A18PZ, NTLJS4114NT1G, NTLJS4149PTAG, P55NF06, NTLLD4901NF, NTLUD3A260PZTAG, NTLUD3A260PZTBG, NTLUD3A50PZ, NTLUD4C26N, NTLUF4189NZTAG, NTLUS3A18PZ, NTLUS3A18PZTAG