NTLJS4159NT1G Todos los transistores

 

NTLJS4159NT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTLJS4159NT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.4 nS
   Cossⓘ - Capacitancia de salida: 115.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: WDFN6
 

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NTLJS4159NT1G Datasheet (PDF)

 ..1. Size:78K  onsemi
 ntljs4159n ntljs4159nt1g.pdf pdf_icon

NTLJS4159NT1G

NTLJS4159NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

 7.1. Size:84K  onsemi
 ntljs4114n.pdf pdf_icon

NTLJS4159NT1G

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

 7.2. Size:91K  onsemi
 ntljs4149 ntljs4149ptag.pdf pdf_icon

NTLJS4159NT1G

NTLJS4149PPower MOSFET-30 V, -5.9 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX Low Profile (

 7.3. Size:115K  onsemi
 ntljs4114nt1g.pdf pdf_icon

NTLJS4159NT1G

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

MOSTRAR MÁS

Otros transistores... NTLJS2103PTAG , NTLJS2103PTBG , NTLJS3113PT1G , NTLJS3113PTAG , NTLJS3180PZTBG , NTLJS3A18PZ , NTLJS4114NT1G , NTLJS4149PTAG , IRFB4115 , NTLLD4901NF , NTLUD3A260PZTAG , NTLUD3A260PZTBG , NTLUD3A50PZ , NTLUD4C26N , NTLUF4189NZTAG , NTLUS3A18PZ , NTLUS3A18PZTAG .

History: HGP068N15S | ELM17408GA

 

 
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