NTLUD4C26N Todos los transistores

 

NTLUD4C26N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTLUD4C26N
   Código: AC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.72 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 5.5 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: UDFN6

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NTLUD4C26N Datasheet (PDF)

 ..1. Size:163K  onsemi
ntlud4c26n.pdf

NTLUD4C26N
NTLUD4C26N

NTLUD4C26NProduct PreviewPower MOSFET30 V, 7.3 A, Dual N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures www.onsemi.com UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving21 mW @ 10 V Ultra Low RDS(on)24 mW @ 4.5 V These Devices are Pb-Free,

 9.1. Size:123K  onsemi
ntlud3a260pz.pdf

NTLUD4C26N
NTLUD4C26N

NTLUD3A260PZPower MOSFET-20 V, -2.1 A, mCoolt Dual P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX ESD Protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 200 mW

 9.2. Size:141K  onsemi
ntlud3191pz.pdf

NTLUD4C26N
NTLUD4C26N

NTLUD3191PZPower MOSFET-20 V, -1.8 A, mCoolt Dual P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX ESD250 mW @ -4.5 V -1.5 A This is a Halide Free Device380 mW @ -2.5 V -1.0 A Th

 9.3. Size:123K  onsemi
ntlud3a50pz.pdf

NTLUD4C26N
NTLUD4C26N

NTLUD3A50PZPower MOSFET-20 V, -5.6 A, mCoolt Dual P-Channel,2.0x2.0x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS50 mW @ -4.5 V

 9.4. Size:120K  onsemi
ntlud3a260pztag ntlud3a260pztbg.pdf

NTLUD4C26N
NTLUD4C26N

NTLUD3A260PZPower MOSFET-20 V, -2.1 A, mCoolt Dual P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX ESD Protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 200 mW

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