NTMD6P02R2G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMD6P02R2G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 515 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET NTMD6P02R2G

NTMD6P02R2G Datasheet (PDF)

..1. Size:106K onsemi
ntmd6p02r2g.pdf

NTMD6P02R2Preferred DevicePower MOSFET6 Amps, 20 VoltsPChannel SO8, DualFeatures Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO8 Surface Mount Package6 AMPERES Diode Exhibits High Speed, Soft Recovery20 VOLTS Avalanche Energy SpecifiedRDS(on) = 33 mW SO8 Mountin

4.1. Size:77K onsemi
ntmd6p02r2-d.pdf

NTMD6P02R2Preferred DevicePower MOSFET6 Amps, 20 VoltsP-Channel SOIC-8, DualFeatures Ultra Low RDS(on) Higher Efficiency Extending Battery Lifehttp://onsemi.com Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy SpecifiedP-Channel SOIC-8 Mounting Inform

4.2. Size:124K onsemi
ntmd6p02r2.pdf

9.1. Size:160K onsemi
ntmd6n03r2.pdf

NTMD6N03R2Power MOSFET30 V, 6 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applications http://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery LifeVDSS RDS(ON) Typ ID Max- RDS(on) = 0.024 W, VGS = 10 V (Typ)30 V 24 mW @ VGS = 10 V 6.0 A- RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8

9.2. Size:74K onsemi
ntmd6n02r2-d.pdf

NTMD6N02R2Power MOSFET6.0 Amps, 20 VoltsN-Channel Enhancement ModeDual SO-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX Ultra Low RDS(on)20 V 35 mW @ VGS = 4.5 V 6.0 A Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount PackageN-Channel Diode Exhibits High Speed, Soft RecoveryD Avalanch

9.3. Size:78K onsemi
ntmd6n04r2.pdf

NTMD6N04R2Power MOSFET40 V, 5.8 A, Dual N-Channel SOIC-8Features Designed for use in low voltage, high speed switching applicationshttp://onsemi.com Ultra Low On-Resistance ProvidesHigher Efficiency and Extends Battery Life - RDS(on) = 0.027 W, VGS = 10 V (Typ)VDSS RDS(ON) Typ ID Max - RDS(on) = 0.034 W, VGS = 4.5 V (Typ)40 V 27 mW @ VGS = 10 V 5.8 A Miniature S

9.4. Size:95K onsemi
ntmd6601n.pdf

NTMD6601NR2GPower MOSFET80 V, 2.2 A, Dual N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) Max Dual SO-8 Surface Mount Package Saves Board Space ID Max This is a Pb-Free Device215 mW @ 10 V80 V 2.2 A245 mW @ 4.5 V

9.5. Size:332K onsemi
ntmd6n03r2g nvmd6n03r2g.pdf

NTMD6N03R2,NVMD6N03R2Power MOSFET30 V, 6A, Dual N--Channel SOIC--8http://onsemi.comFeatures Designed for use in low voltage, high speed switching applicationsVDSS RDS(ON) Typ ID Max Ultra Low On--Resistance ProvidesHigher Efficiency and Extends Battery Life30 V 24 m @VGS =10V 6.0 A-- RDS(on) = 0.024 , VGS = 10 V (Typ)-- RDS(on) = 0.030 , VGS = 4.5 V (Typ)N-

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