NTMD6P02R2G Datasheet. Specs and Replacement

Type Designator: NTMD6P02R2G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 515 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SO-8

NTMD6P02R2G substitution

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NTMD6P02R2G datasheet

 ..1. Size:106K  onsemi
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NTMD6P02R2G

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P Channel SO 8, Dual Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO 8 Surface Mount Package 6 AMPERES Diode Exhibits High Speed, Soft Recovery 20 VOLTS Avalanche Energy Specified RDS(on) = 33 mW SO 8 Mountin... See More ⇒

 4.1. Size:77K  onsemi
ntmd6p02r2-d.pdf pdf_icon

NTMD6P02R2G

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P-Channel SOIC-8, Dual Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life http //onsemi.com Logic Level Gate Drive Miniature Dual SOIC-8 Surface Mount Package 6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified P-Channel SOIC-8 Mounting Inform... See More ⇒

 4.2. Size:124K  onsemi
ntmd6p02r2.pdf pdf_icon

NTMD6P02R2G

NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P Channel SO 8, Dual Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO 8 Surface Mount Package 6 AMPERES Diode Exhibits High Speed, Soft Recovery 20 VOLTS Avalanche Energy Specified RDS(on) = 33 mW SO 8 Mountin... See More ⇒

 9.1. Size:160K  onsemi
ntmd6n03r2.pdf pdf_icon

NTMD6P02R2G

NTMD6N03R2 Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8 Features Designed for use in low voltage, high speed switching applications http //onsemi.com Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life VDSS RDS(ON) Typ ID Max - RDS(on) = 0.024 W, VGS = 10 V (Typ) 30 V 24 mW @ VGS = 10 V 6.0 A - RDS(on) = 0.030 W, VGS = 4.5 V (Typ) Miniature SOIC-8... See More ⇒

Detailed specifications: NTLUS4930N, NTLUS4C12N, NTLUS4C16N, NTMD4184PFR2G, NTMD4884NFR2G, NTMD4N03, NTMD5836NLR2G, NTMD6N03R2G, IRF530, NTMFD4901NF, NTMFD4902NF, NTMFD4C20N, NTMFD4C85N, NTMFD4C86N, NTMFD4C87N, NTMFD4C88N, NTMFS4108NT1G

Keywords - NTMD6P02R2G MOSFET specs

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