NTMFD4901NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMFD4901NF
   Código: 4901NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 9.7 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: DFN8

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NTMFD4901NF Datasheet (PDF)

..1. Size:165K onsemi
ntmfd4901nf.pdf

NTMFD4901NFDual N-Channel PowerMOSFET with IntegratedSchottky30 V, High Side 18 A / Low Side 30 A, Dualhttp://onsemi.comN-Channel SO8FLV(BR)DSS RDS(ON) MAX ID MAXFeatures6.5 mW @ 10 VQ1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space18 A10 mW @ 4.5 V30 V Low Side MOSFET with Integrated SchottkyQ2 Bottom2.35 mW @ 10 V Minimized Parasi

6.1. Size:158K onsemi
ntmfd4902nf.pdf

NTMFD4902NFDual N-Channel PowerMOSFET with IntegratedSchottky30 V, High Side 18 A / Low Side 23 A, Dualhttp://onsemi.comN-Channel SO8FLV(BR)DSS RDS(ON) MAX ID MAXFeatures6.5 mW @ 10 VQ1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space18 A10 mW @ 4.5 V30 V Low Side MOSFET with Integrated SchottkyQ2 Bottom4.1 mW @ 10 V Minimized Parasit

8.1. Size:117K onsemi
ntmfd4c87n.pdf

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3

8.2. Size:130K onsemi
ntmfd4c85n.pdf

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3

8.3. Size:1492K onsemi
ntmfd4c50n.pdf

8.4. Size:128K onsemi
ntmfd4c86n.pdf

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

8.5. Size:156K onsemi
ntmfd4c20n.pdf

NTMFD4C20NDual N-Channel PowerMOSFET30 V, High Side 18 A / Low Side 27 A, DualN-Channel SO8FLhttp://onsemi.comFeaturesV(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space7.3 mW @ 10 V Minimized Parasitic InductancesQ1 Top FET18 A Optimized Devices to Reduce Power Losses30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog

8.6. Size:123K onsemi
ntmfd4c88n.pdf

NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

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