NTMFD4902NF Datasheet. Equivalente

 ..1. Size:158K  onsemi
 ntmfd4902nf.pdf

NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual http //onsemi.com N-Channel SO8FL V(BR)DSS RDS(ON) MAX ID MAX Features 6.5 mW @ 10 V Q1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space 18 A 10 mW @ 4.5 V 30 V Low Side MOSFET with Integrated Schottky Q2 Bottom 4.1 mW @ 10 V Minimized Parasit

 6.1. Size:165K  onsemi
 ntmfd4901nf.pdf

NTMFD4901NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 30 A, Dual http //onsemi.com N-Channel SO8FL V(BR)DSS RDS(ON) MAX ID MAX Features 6.5 mW @ 10 V Q1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space 18 A 10 mW @ 4.5 V 30 V Low Side MOSFET with Integrated Schottky Q2 Bottom 2.35 mW @ 10 V Minimized Parasi

 8.1. Size:117K  onsemi
 ntmfd4c87n.pdf

NTMFD4C87N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Q1 Top FET Compliant 20 A 3

 8.2. Size:130K  onsemi
 ntmfd4c85n.pdf

NTMFD4C85N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 mW @ 10 V Q1 Top FET Compliant 25 A 3

 8.3. Size:1492K  onsemi
 ntmfd4c50n.pdf

 8.4. Size:128K  onsemi
 ntmfd4c86n.pdf

NTMFD4C86N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30

 8.5. Size:156K  onsemi
 ntmfd4c20n.pdf

NTMFD4C20N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual N-Channel SO8FL http //onsemi.com Features V(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space 7.3 mW @ 10 V Minimized Parasitic Inductances Q1 Top FET 18 A Optimized Devices to Reduce Power Losses 30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog

 8.6. Size:123K  onsemi
 ntmfd4c88n.pdf

NTMFD4C88N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30