NTMFD4902NF - Даташиты. Аналоги. Основные параметры

NTMFD4902NFDual N-Channel PowerMOSFET with IntegratedSchottky30 V, High Side 18 A / Low Side 23 A, Dualhttp://onsemi.comN-Channel SO8FLV(BR)DSS RDS(ON) MAX ID MAXFeatures6.5 mW @ 10 VQ1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space18 A10 mW @ 4.5 V30 V Low Side MOSFET with Integrated SchottkyQ2 Bottom4.1 mW @ 10 V Minimized Parasit

NTMFD4901NFDual N-Channel PowerMOSFET with IntegratedSchottky30 V, High Side 18 A / Low Side 30 A, Dualhttp://onsemi.comN-Channel SO8FLV(BR)DSS RDS(ON) MAX ID MAXFeatures6.5 mW @ 10 VQ1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space18 A10 mW @ 4.5 V30 V Low Side MOSFET with Integrated SchottkyQ2 Bottom2.35 mW @ 10 V Minimized Parasi

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

NTMFD4C20NDual N-Channel PowerMOSFET30 V, High Side 18 A / Low Side 27 A, DualN-Channel SO8FLhttp://onsemi.comFeaturesV(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space7.3 mW @ 10 V Minimized Parasitic InductancesQ1 Top FET18 A Optimized Devices to Reduce Power Losses30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog

NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30