Справочник MOSFET. NTMFD4902NF

 

NTMFD4902NF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFD4902NF
   Маркировка: 4902NF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.7 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: DFN8

 Аналог (замена) для NTMFD4902NF

 

 

NTMFD4902NF Datasheet (PDF)

 ..1. Size:158K  onsemi
 ntmfd4902nf.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4902NFDual N-Channel PowerMOSFET with IntegratedSchottky30 V, High Side 18 A / Low Side 23 A, Dualhttp://onsemi.comN-Channel SO8FLV(BR)DSS RDS(ON) MAX ID MAXFeatures6.5 mW @ 10 VQ1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space18 A10 mW @ 4.5 V30 V Low Side MOSFET with Integrated SchottkyQ2 Bottom4.1 mW @ 10 V Minimized Parasit

 6.1. Size:165K  onsemi
 ntmfd4901nf.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4901NFDual N-Channel PowerMOSFET with IntegratedSchottky30 V, High Side 18 A / Low Side 30 A, Dualhttp://onsemi.comN-Channel SO8FLV(BR)DSS RDS(ON) MAX ID MAXFeatures6.5 mW @ 10 VQ1 Top FET Co-Packaged Power Stage Solution to Minimize Board Space18 A10 mW @ 4.5 V30 V Low Side MOSFET with Integrated SchottkyQ2 Bottom2.35 mW @ 10 V Minimized Parasi

 8.1. Size:117K  onsemi
 ntmfd4c87n.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3

 8.2. Size:130K  onsemi
 ntmfd4c85n.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3

 8.3. Size:1492K  onsemi
 ntmfd4c50n.pdf

NTMFD4902NF NTMFD4902NF

 8.4. Size:128K  onsemi
 ntmfd4c86n.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

 8.5. Size:156K  onsemi
 ntmfd4c20n.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4C20NDual N-Channel PowerMOSFET30 V, High Side 18 A / Low Side 27 A, DualN-Channel SO8FLhttp://onsemi.comFeaturesV(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space7.3 mW @ 10 V Minimized Parasitic InductancesQ1 Top FET18 A Optimized Devices to Reduce Power Losses30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog

 8.6. Size:123K  onsemi
 ntmfd4c88n.pdf

NTMFD4902NF NTMFD4902NF

NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

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