NTMFD4C86N Todos los transistores

 

NTMFD4C86N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFD4C86N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21.2 nS
   Cossⓘ - Capacitancia de salida: 532 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm
   Paquete / Cubierta: DFN8
 

 Búsqueda de reemplazo de NTMFD4C86N MOSFET

   - Selección ⓘ de transistores por parámetros

 

NTMFD4C86N Datasheet (PDF)

 ..1. Size:128K  onsemi
 ntmfd4c86n.pdf pdf_icon

NTMFD4C86N

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

 6.1. Size:117K  onsemi
 ntmfd4c87n.pdf pdf_icon

NTMFD4C86N

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3

 6.2. Size:130K  onsemi
 ntmfd4c85n.pdf pdf_icon

NTMFD4C86N

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3

 6.3. Size:123K  onsemi
 ntmfd4c88n.pdf pdf_icon

NTMFD4C86N

NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30

MOSTRAR MÁS

Otros transistores... NTMD4N03 , NTMD5836NLR2G , NTMD6N03R2G , NTMD6P02R2G , NTMFD4901NF , NTMFD4902NF , NTMFD4C20N , NTMFD4C85N , IRF1407 , NTMFD4C87N , NTMFD4C88N , NTMFS4108NT1G , NTMFS4119NT1G , NTMFS4120NT1G , NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G .

History: SSM5N16FU | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | NTMFS1D15N03CG | 2N6917 | P2804NVG

 

 
Back to Top

 


 
.