NTMFD4C86N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD4C86N  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21.2 nS

Cossⓘ - Capacitancia de salida: 532 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: DFN8

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NTMFD4C86N datasheet

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NTMFD4C86N

NTMFD4C86N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 32 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30

 6.1. Size:117K  onsemi
 ntmfd4c87n.pdf pdf_icon

NTMFD4C86N

NTMFD4C87N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 26 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Q1 Top FET Compliant 20 A 3

 6.2. Size:130K  onsemi
 ntmfd4c85n.pdf pdf_icon

NTMFD4C86N

NTMFD4C85N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 25 A / Low Side 49 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 mW @ 10 V Q1 Top FET Compliant 25 A 3

 6.3. Size:123K  onsemi
 ntmfd4c88n.pdf pdf_icon

NTMFD4C86N

NTMFD4C88N PowerPhase, Dual N-Channel SO8FL 30 V, High Side 20 A / Low Side 24 A Features Co-Packaged Power Stage Solution to Minimize Board Space www.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.4 mW @ 10 V Compliant Q1 Top FET 20 A 30

MOSTRAR MÁS

Otros transistores... NTMD4N03, NTMD5836NLR2G, NTMD6N03R2G, NTMD6P02R2G, NTMFD4901NF, NTMFD4902NF, NTMFD4C20N, NTMFD4C85N, IRFP450, NTMFD4C87N, NTMFD4C88N, NTMFS4108NT1G, NTMFS4119NT1G, NTMFS4120NT1G, NTMFS4121NT1G, NTMFS4122NT1G, NTMFS4701NT1G