NTMFD4C86N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD4C86N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21.2 nS
Cossⓘ - Capacitancia de salida: 532 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm
Paquete / Cubierta: DFN8
Búsqueda de reemplazo de NTMFD4C86N MOSFET
NTMFD4C86N Datasheet (PDF)
ntmfd4c86n.pdf

NTMFD4C86NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 32 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30
ntmfd4c87n.pdf

NTMFD4C87NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 26 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VQ1 Top FETCompliant20 A3
ntmfd4c85n.pdf

NTMFD4C85NPowerPhase, DualN-Channel SO8FL30 V, High Side 25 A / Low Side 49 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 mW @ 10 VQ1 Top FETCompliant25 A3
ntmfd4c88n.pdf

NTMFD4C88NPowerPhase, DualN-Channel SO8FL30 V, High Side 20 A / Low Side 24 AFeatures Co-Packaged Power Stage Solution to Minimize Board Spacewww.onsemi.com Minimized Parasitic Inductances Optimized Devices to Reduce Power LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.4 mW @ 10 VCompliant Q1 Top FET20 A30
Otros transistores... NTMD4N03 , NTMD5836NLR2G , NTMD6N03R2G , NTMD6P02R2G , NTMFD4901NF , NTMFD4902NF , NTMFD4C20N , NTMFD4C85N , IRF1407 , NTMFD4C87N , NTMFD4C88N , NTMFS4108NT1G , NTMFS4119NT1G , NTMFS4120NT1G , NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G .
History: JCS3AN150CA | AO7415 | PHP78NQ03LT | PHP71NQ03LT
History: JCS3AN150CA | AO7415 | PHP78NQ03LT | PHP71NQ03LT



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