NTMFS4841NHT1G Todos los transistores

 

NTMFS4841NHT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS4841NHT1G
   Código: 4841NH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 11.3 nC
   trⓘ - Tiempo de subida: 23.3 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: SO-8FL
 

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NTMFS4841NHT1G Datasheet (PDF)

 ..1. Size:108K  onsemi
 ntmfs4841nht1g.pdf pdf_icon

NTMFS4841NHT1G

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A

 3.1. Size:138K  onsemi
 ntmfs4841nh.pdf pdf_icon

NTMFS4841NHT1G

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A

 4.1. Size:145K  onsemi
 ntmfs4841n.pdf pdf_icon

NTMFS4841NHT1G

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4

 4.2. Size:115K  onsemi
 ntmfs4841nt1g.pdf pdf_icon

NTMFS4841NHT1G

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4.

MOSTRAR MÁS

Otros transistores... NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G , NTMFS4839NT1G , IRF730 , NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G .

History: IRFS7430-7PPBF | BL9N90-A | QM3202S

 

 
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