NTMFS4841NHT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4841NHT1G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23.3 nS

Cossⓘ - Capacitancia de salida: 325 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: SO-8FL

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NTMFS4841NHT1G datasheet

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NTMFS4841NHT1G

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

 3.1. Size:138K  onsemi
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NTMFS4841NHT1G

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

 4.1. Size:145K  onsemi
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NTMFS4841NHT1G

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4

 4.2. Size:115K  onsemi
 ntmfs4841nt1g.pdf pdf_icon

NTMFS4841NHT1G

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.

MOSTRAR MÁS

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