Справочник MOSFET. NTMFS4841NHT1G

 

NTMFS4841NHT1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS4841NHT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.87 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 23.3 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: SO-8FL
 

 Аналог (замена) для NTMFS4841NHT1G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTMFS4841NHT1G Datasheet (PDF)

 ..1. Size:108K  onsemi
ntmfs4841nht1g.pdfpdf_icon

NTMFS4841NHT1G

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A

 3.1. Size:138K  onsemi
ntmfs4841nh.pdfpdf_icon

NTMFS4841NHT1G

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A

 4.1. Size:145K  onsemi
ntmfs4841n.pdfpdf_icon

NTMFS4841NHT1G

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4

 4.2. Size:115K  onsemi
ntmfs4841nt1g.pdfpdf_icon

NTMFS4841NHT1G

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4.

Другие MOSFET... NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G , NTMFS4839NT1G , IRF730 , NTMFS4841NT1G , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G .

History: VBE2102M | OSG80R380HF | PD696BA | HGN080N10SL | SSM3K116TU | 7409B

 

 
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